https://nova.newcastle.edu.au/vital/access/ /manager/Index en-au 5 https://nova.newcastle.edu.au/vital/access/ /manager/Repository/uon:55182 Wed 24 Apr 2024 09:41:14 AEST ]]> https://nova.newcastle.edu.au/vital/access/ /manager/Repository/uon:53741 Thu 11 Jan 2024 12:14:59 AEDT ]]> https://nova.newcastle.edu.au/vital/access/ /manager/Repository/uon:31417 ρ_c ~ 2 mΩcm² can be realised on undiffused n-type silicon, thus enabling partial rear contacts cell designs on n-type silicon without the need for a phosphorus diffusion. Integrating the Ca/Al stack into a partial rear contact solar cell architecture fabricated on a lightly doped (N_D = 4.5 × 10¹⁴ cm⁻³) n-type wafer resulted in a device efficiency of η = 17.6% where the Ca/Al contact comprised only ~1.26% of the rear surface. We demonstrate an improvement in this cell structure to an efficiency of η = 20.3% by simply increasing the wafer doping by an order of magnitude to N_D = 5.4 × 10¹⁵ cm⁻³.]]> Sat 24 Mar 2018 08:43:54 AEDT ]]> https://nova.newcastle.edu.au/vital/access/ /manager/Repository/uon:18716 Sat 24 Mar 2018 08:01:05 AEDT ]]> https://nova.newcastle.edu.au/vital/access/ /manager/Repository/uon:23991 R) and Richardson constants (Α_R) were determined using a Schottky diode arrangement at temperatures ranging from 1223 to 1473 K. Work functions ranged from 2.67 eV to 3.32 eV with a shallow minimum at 40% by mass W and were relatively constant (~2.7-2.8 eV) in the range 30-70% by mass W. The decrease in work function was accompanied by a strong decrease in A_R from 39.3 A cm⁻² K⁻² to 0.02 A cm⁻² K⁻² over the range 20-70% by mass W. The reduction in both φ_R and A_R was associated with the major conversion of the surface to BaWO₄ and Ba₄Ti₁₂O₂₇ during the activation treatment before emission testing.]]> Sat 24 Mar 2018 07:10:24 AEDT ]]>